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| BC856T PNP Silicon AF Transistor Preliminary data For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Complementary types: BC 846T 3 2 1 VPS05996 Type BC856AT BC856BT Maximum Ratings Parameter Marking 3As 3Bs 1=B 1=B Pin Configuration 2=E 2=E 3=C 3=C Package SC75 SC75 Symbol VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg Value 65 80 80 5 100 200 250 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Total power dissipation, TS = 109 C Junction temperature Storage temperature mA mA mW C Thermal Resistance Junction - soldering point 1) RthJS 165 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jan-08-2002 Electrical Characteristics at TA=25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics per Transistor Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Collector-emitter breakdown voltage IC = 10 A, VBE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 C DC current gain 1) IC = 10 A, VCE = 5 V IC = 10 A, VCE = 5 V IC = 2 mA, VCE = 5 V IC = 2 mA, VCE = 5 V IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage 1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V VBE(ON) 600 650 750 820 VBEsat 700 850 BC856AT BC856BT BC856AT BC856BT VCEsat 90 250 300 650 hFE 125 220 140 250 180 290 250 475 ICBO 5 ICBO 15 V(BR)EBO 5 V(BR)CES 80 V(BR)CBO 80 V(BR)CEO 65 typ. max. Unit V nA A - Collector-emitter saturation voltage1) mV mV 1) Pulse test: t < 300s; D < 2% 2 Jan-08-2002 Electrical Characteristics at T A=25C, unless otherwise specified Parameter Symbol Values min. AC Characteristics per Transistor Transition frequency I C = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance I C = 2 mA, V CE = 5 V, f = 1 kHz BC856AT I C = 2 mA, V CE = 5 V, f = 1 kHz BC856BT Open-circuit reverse voltage transf.ratio I C = 2 mA, V CE = 5 V, f = 1 kHz BC856AT I C = 2 mA, V CE = 5 V, f = 1 kHz BC856BT Short-circuit forward current transf.ratio I C = 2 mA, V CE = 5 V, f = 1 kHz BC856AT I C = 2 mA, V CE = 5 V, f = 1 kHz BC856BT Open-circuit output admittance I C = 2 mA, V CE = 5 V, f = 1 kHz BC856AT I C = 2 mA, V CE = 5 V, f = 1 kHz BC856BT h22e 18 30 h21e 200 330 h12e 1.5 2 h11e 2.7 4.5 Ceb 8 Ccb 3 fT 250 typ. max. Unit MHz pF k 10 -4 - S 3 Jan-08-2002 Total power dissipation Ptot = f (TS ) 300 mW Ptot 200 150 100 50 0 0 20 40 60 80 100 120 C 150 TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 K/W 10 3 10 2 Ptotmax/PtotDC - 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 Jan-08-2002 Transition frequency fT = f (IC) VCE = 5V 10 3 MHz EHP00378 Collector-base capacitance CCB = f (VCBO Emitter-base capacitance CEB = f (VEBO) BC 856...860 EHP00376 fT 5 C CB0 ( C EB0 ) 12 pF 10 8 C EBO 10 2 6 5 4 C CBO 2 10 1 10 -1 5 10 0 5 10 1 mA C 10 2 0 10 -1 5 10 0 V VCB0 10 1 (VEB0 ) Collector cutoff current ICBO = f (TA ) VCB = 30V 10 4 nA EHP00381 Collector-emitter saturation voltage IC = f (VCEsat), h FE = 20 10 2 EHP00380 CB0 10 3 5 10 2 5 10 1 5 10 5 10 -1 0 C mA 100 C 25 C -50 C max 10 1 5 typ 10 5 0 0 50 100 C TA 150 10 -1 0 0.1 0.2 0.3 0.4 V 0.5 VCEsat 5 Jan-08-2002 DC current gain hFE = f (IC ) VCE = 5V 10 3 EHP00382 Base-emitter saturation voltage IC = f (VBEsat), hFE = 20 10 2 mA EHP00379 h FE 5 100 C 25 C C 100 C 25 C -50C 10 2 5 -50 C 10 1 5 10 1 5 10 0 5 10 0 10 -2 5 10 -1 5 10 0 5 10 1 mA 10 2 10 -1 0 0.2 0.4 0.6 0.8 C V 1.2 V BEsat 6 Jan-08-2002 |
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